Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions

Roul, Basanta and Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions. In: Solid State Communications, 151 (20). pp. 1420-1423.

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Abstract

The electrical transport properties of InN/GaN heterostructure based Schottky junctions were studied over a wide temperature range of 200-500 K. The barrier height and the ideality factor were calculated from current-voltage (I-V) characteristics based on thermionic emission (TE), and found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The observed temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. Such inhomogeneous behavior was modeled by assuming the existence of a Gaussian distribution of barrier heights at the heterostructure interface. (C) 2011 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	Heterostructures;Schottky junctions;Thermionic emission
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	25 Oct 2011 10:11
Last Modified:	25 Oct 2011 10:11
URI:	http://eprints.iisc.ac.in/id/eprint/41406

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