An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET

Jandhyala, Srivatsava and Mahapatra, Santanu (2011) An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET. In: IEEE Transactions on Electron Devices, 58 (6). pp. 1663-1671.

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Abstract

Although the recently proposed single-implicit-equation-based input voltage equations (IVEs) for the independent double-gate (IDG) MOSFET promise faster computation time than the earlier proposed coupled-equations-based IVEs, it is not clear how those equations could be solved inside a circuit simulator as the conventional Newton-Raphson (NR)-based root finding method will not always converge due to the presence of discontinuity at the G-zero point (GZP) and nonremovable singularities in the trigonometric IVE. In this paper, we propose a unique algorithm to solve those IVEs, which combines the Ridders algorithm with the NR-based technique in order to provide assured convergence for any bias conditions. Studying the IDG MOSFET operation carefully, we apply an optimized initial guess to the NR component and a minimized solution space to the Ridders component in order to achieve rapid convergence, which is very important for circuit simulation. To reduce the computation budget further, we propose a new closed-form solution of the IVEs in the near vicinity of the GZP. The proposed algorithm is tested with different device parameters in the extended range of bias conditions and successfully implemented in a commercial circuit simulator through its Verilog-A interface.

Item Type:	Journal Article
Publication:	IEEE Transactions on Electron Devices
Publisher:	IEEE
Additional Information:	Copyright 2011 IEEE. Personal use of this material is permitted.However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	Circuit simulation;compact modeling;double-gate MOSFET;input voltage equations (IVEs)
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	22 Jun 2011 09:25
Last Modified:	23 Oct 2018 14:50
URI:	http://eprints.iisc.ac.in/id/eprint/38423

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