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Probing Single and Bilayer Graphene Field Effect Transistors By Raman Spectroscopy

Das, A and Chakraborty, B and Sood, AK (2011) Probing Single and Bilayer Graphene Field Effect Transistors By Raman Spectroscopy. In: Modern Physics Letters B, 25 (8). pp. 511-535.

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Official URL: http://www.worldscinet.com/mplb/25/2508/S021798491...

Abstract

This article is a review of our work related to Raman studies of single layer and bilayer graphenes as a function Fermi level shift achieved by electrochemically top gating a field effect transistor. Combining the transport and in situ Raman studies of the field effect devices, a quantitative understanding is obtained of the phonon renormalization due to doping of graphene. Results are discussed in the light of time dependent perturbation theory, with electron phonon coupling parameter as an input from the density functional theory. It is seen that phonons near and Gamma and K points of the Brillouin zone are renormalized very differently by doping. Further, Gamma-phonon renormalization is different in bilayer graphene as compared to single layer, originating from their different electronic band structures near the zone boundary K-point. Thus Raman spectroscopy is not only a powerful probe to characterize the number of layers and their quality in a graphene sample, but also to quantitatively evaluate electron phonon coupling required to understand the performance of graphene devices.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to World Scientific Publishing Company.
Keywords: Single layer graphene;bilayer graphene;phonons;Raman spectroscopy;electron-phonon coupling;graphene field effect transistor;electrochemical doping
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 15 Apr 2011 05:49
Last Modified: 15 Apr 2011 05:49
URI: http://eprints.iisc.ac.in/id/eprint/36568

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