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Kinetic approach to dislocation bending in low-mobility films

Raghavan, Srinivasan (2011) Kinetic approach to dislocation bending in low-mobility films. In: Physical Review B: Condensed Matter and Materials Physics, 83 (5).

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Official URL: http://prb.aps.org/abstract/PRB/v83/i5/e052102


A kinetic model has been developed for dislocation bending at the growth surface in compressively stressed low-mobility films such as III-V nitrides. It is based on a reduction in the number of atoms at the growth surface. Stress and nonstress sources of driving force for such a reduction are discussed. A comparison between the derived equations and experimentally measured stress evolution data yields good agreement between the predicted and observed angles through which dislocations bend.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to The American Physical Society.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 09 Mar 2011 07:00
Last Modified: 09 Mar 2011 07:00
URI: http://eprints.iisc.ac.in/id/eprint/35881

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