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Tuning the electronic effective mass in double-doped SrTiO3

Ravichandran, J and Siemons, W and Scullin, ML and Mukerjee, S and Huijben, M and Moore, JE and Majumdar, A and Ramesh, R (2011) Tuning the electronic effective mass in double-doped SrTiO3. In: Physical Review B: Condensed Matter and Materials Physics, 83 (3).

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Official URL: http://prb.aps.org/abstract/PRB/v83/i3/e035101

Abstract

We elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1-xLaxTiO3-delta, we can tune the effective mass ranging from 6 to 20m(e) as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum-and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1-xLaxTiO3-delta. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to The American Physical Society.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 09 Mar 2011 05:23
Last Modified: 09 Mar 2011 05:23
URI: http://eprints.iisc.ac.in/id/eprint/35880

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