A note on transient photocurrents at semiconductor electrodes

Ramakrishna, S and Rangarajan, SK (1991) A note on transient photocurrents at semiconductor electrodes. In: Journal of Electroanalytical Chemistry, 308 (1-2). pp. 39-48.

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Abstract

The imprint of the changing surface concentration of minority carriers in photocurrent transients is marginalized in “switch off” transients as compared to “switch on” transients. When the surface level is situated close to either one of the band edges, it is shown that in principle it must be possible to obtain the energy of the surface level from “switch off” transients.The time constants for the “switch on” and “switch off” cases behave differently with potential. While in “switch off”, transient plots, the magnitude of the slope decreases monotonically with increasing band bending potentials; for the “switch on” however, though it decreases and is identical to “switch off” initially, beyond a certain increase in potential the magnitude of the slope shows an increase.

Item Type:	Journal Article
Publication:	Journal of Electroanalytical Chemistry
Publisher:	Elsevier science
Additional Information:	Copyright of this article belongs to Elsevier science.
Department/Centre:	Division of Chemical Sciences > Inorganic & Physical Chemistry
Date Deposited:	09 Nov 2010 08:30
Last Modified:	09 Nov 2010 08:30
URI:	http://eprints.iisc.ac.in/id/eprint/33626

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