Gopalakrishnan, J and Hegde, MS (1978) Pes study of semiconductor-metal transition in nis. In: Indian Journal of Pure & Applied Physics, 16 (9). pp. 864-866.
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| Item Type: | Editorials/Short Communications |
|---|---|
| Publication: | Indian Journal of Pure & Applied Physics |
| Publisher: | National Institute of Science Communication and Information Resources |
| Additional Information: | Copyright of this article belongs to National Institute of Science Communication and Information Resources. |
| Department/Centre: | Division of Chemical Sciences > Solid State & Structural Chemistry Unit |
| Date Deposited: | 23 Aug 2010 12:10 |
| Last Modified: | 23 Aug 2010 12:10 |
| URI: | http://eprints.iisc.ac.in/id/eprint/31423 |
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