Das, Rasmi R and Rodriguez, RJ and Katiyara, Ram S and Krupanidhi, SB (2001) $CaBi_2Ta_2O_9$ ferroelectric thin films prepared by pulsed laser deposition. In: Applied Physics Letters, 78 (19). pp. 2925-2927.
|
PDF
laser_deposition.pdf Download (148kB) |
Abstract
Thin films of $CaBi_2Ta_2O_9$ (CBT) were deposited on $Pt/TiO_2/SiO_2/Si$ substrates using the pulsed laser deposition technique at temperatures ranging from 500 to 700°C. The presence of (115) and (00 ) orientations confirm the phase formation at the lower temperature (500°C). Microstructure evolution of CBT films with oxygen pressure of 100-200 mTorr at a substrate temperature of 650°C shows that the films deposited at lower pressure have a relatively smaller grain size and less surface roughness. The films grown at 650°C exhibited a maximum polarization of (2Pm) 17 µC/cm2, remanent polarization of (2Pr) 8 µC/cm2 and coercive field of (Ec) 128 kV/cm, with fatigue endurance up to 1010 switching cycles. The higher dielectric constant (~115 at 100 kHz) with a relatively lower dissipation factor (0.02) at higher growth temperature (700°C) was explained by the increased grain size. The higher leakage current density $(~10^7 A/cm^2)$ at higher deposition temperature is attributed to the interfacial diffusion of the film and the substrate.
Item Type: | Journal Article |
---|---|
Publication: | Applied Physics Letters |
Publisher: | American Institute of Physics |
Additional Information: | Copyright for this article belongs to American Institute of Physics (AIP). |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 31 Mar 2005 |
Last Modified: | 19 Sep 2010 04:18 |
URI: | http://eprints.iisc.ac.in/id/eprint/2976 |
Actions (login required)
View Item |