Large reduction of leakage current by graded-layer La doping in $(Ba_0_._5, Sr_0_._5)TiO_3$ thin films

Saha, S and Krupanidhi, SB (2001) Large reduction of leakage current by graded-layer La doping in $(Ba_0_._5, Sr_0_._5)TiO_3$ thin films. In: Applied Physics Letters, 79 (1). pp. 111-113.

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Abstract

A large reduction in the leakage current behavior in (Ba, Sr)TiO3 (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole-Frenkel conduction mechanism.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Keywords:	graded-layer La doping;Large reduction of leakage current;thin films
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	30 Mar 2005
Last Modified:	19 Sep 2010 04:18
URI:	http://eprints.iisc.ac.in/id/eprint/2975

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