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Anomalous temperature dependence of Fermi-edge singularity in modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

Naik, KG and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2005) Anomalous temperature dependence of Fermi-edge singularity in modulation-doped AlGaAs/InGaAs/GaAs hetero-structures. In: Symposium on Micro- and Nanosystems held at the 2005 MRS Spring Meeting, MAR 28-APR 01, 2005, San Francisco.

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The temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E-11 and E-21 considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5-10 meV below the E-21 transition. At 4.2 K, FES appears as a lower energy shoulder to the E-21 transition. The PL intensity of all the three transitions E-11, FES and E-21 grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E-11 and E-21 decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

Item Type: Conference Paper
Publisher: Materials Research Society
Additional Information: Copyright of this article belongs to Materials Research Society.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 28 Apr 2010 05:29
Last Modified: 28 Apr 2010 05:29
URI: http://eprints.iisc.ac.in/id/eprint/27326

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