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Design of a high sensitivity FET integrated MEMS microphone

Kaur, Malhi Charanjeet and Pratap, Rudra and Bhat, Navakanta (2009) Design of a high sensitivity FET integrated MEMS microphone. In: 23rd Eurosensors Conference, SEP 06-09, 2009, Lausanne, pp. 875-878.

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Official URL: http://dx.doi.org/10.1016/j.proche.2009.07.218


FET based MEMS microphones comprise of a flexible diaphragm that works as the moving gate of the transistor. The integrated electromechanical transducer can be made more sensitive to external sound pressure either by increasing the mechanical or the electrical sensitivities. We propose a method of increasing the overall sensitivity of the microphone by increasing its electrical sensitivity. The proposed microphone uses the transistor biased in the sub-threshold region where the drain current depends exponentially on the difference between the gate-to-source voltage and the threshold voltage. The device is made more sensitive without adding any complexity in the mechanical design of the diaphragm.

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: FET (Field Effect Transistor); Microphone; subthreshold; suspended gate; sensitivity
Department/Centre: Division of Mechanical Sciences > Mechanical Engineering
Depositing User: Ms G Yashodha
Date Deposited: 10 Jun 2010 04:31
Last Modified: 19 Sep 2010 06:00
URI: http://eprints.iisc.ac.in/id/eprint/27140

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