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High energy oxygen ion induced modifications in lead based perovskite thin films

Jali, VM and Angadi, Basavaraj and Venkateswarlu, P and Kumar, Ravi and Krupanidhi, SB (2007) High energy oxygen ion induced modifications in lead based perovskite thin films. In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 260 (2). pp. 553-562.

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The lead based ferroelectric PbZr0.53Ti0.47O3 (PZT), (Pb0.90La0.10)TiO3 (PLT10) and (Pb0.80La0.20)TiO3 (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance-voltage (C- V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C-V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 degrees C for 10 min. The phase transition temperature [T-c] of PLT20 increased from 115 degrees C to 120 degrees C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 degrees C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation. (C) 2007 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Ms G Yashodha
Date Deposited: 29 Mar 2010 11:48
Last Modified: 19 Sep 2010 05:57
URI: http://eprints.iisc.ac.in/id/eprint/26256

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