Some investigations on secondary breakdown in p-n junctions considering the effect of thermally generated carriers

Zarab, MJ and Satyam, M (1977) Some investigations on secondary breakdown in p-n junctions considering the effect of thermally generated carriers. In: Solid-State Electronics, 20 (5). pp. 407-412.

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Abstract

The V-I characteristic of a p-n junction under breakdown is calculated taking the thermally generated carriers into account. The current density distributions computed under different conditions have been given. The light emission and other characteristics reported by Chiang and Lauritzen and others have been explained.

Item Type:	Journal Article
Publication:	Solid-State Electronics
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	04 Feb 2010 05:30
Last Modified:	04 Jan 2013 07:26
URI:	http://eprints.iisc.ac.in/id/eprint/24562

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