Chakrabarti, Utpal KR (1977) A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface. In: Solid-State Electronics, 20 (2). pp. 111-112.
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Abstract
A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.
| Item Type: | Journal Article |
|---|---|
| Publication: | Solid-State Electronics |
| Publisher: | Elsevier Science. |
| Additional Information: | Copyright fort this article belongs to Elsevier Science. |
| Department/Centre: | Division of Electrical Sciences > Electrical Engineering |
| Date Deposited: | 21 Jan 2010 06:28 |
| Last Modified: | 19 Sep 2010 05:50 |
| URI: | http://eprints.iisc.ac.in/id/eprint/24405 |
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