Ultralow noise field-effect transistor from multilayer graphene

Pal, Atindra Nath and Ghosh, Arindam (2009) Ultralow noise field-effect transistor from multilayer graphene. In: Applied Physics Letters, 95 (8). 082105-082108.

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Abstract

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices, the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers. ©2009 American Institute of Physics

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	13 Dec 2009 10:29
Last Modified:	19 Sep 2010 05:46
URI:	http://eprints.iisc.ac.in/id/eprint/23677

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