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The formation of a p-n junction in a polymer electrolyte top-gated bilayer graphene transistor

Chakraborty, Biswanath and Das, Anindya and Sood, AK (2009) The formation of a p-n junction in a polymer electrolyte top-gated bilayer graphene transistor. In: Nanotechnology, 20 (36).

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Abstract

We show simultaneous p- and n-type carrier injection in a bilayer graphene channel by varying the longitudinal bias across the channel and the top-gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 microF cm(-2), a value about 125 times higher than the conventional SiO(2) back-gate capacitance. Unlike the single-layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top- and back-gate geometry is estimated.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 28 Aug 2009 12:17
Last Modified: 19 Sep 2010 05:42
URI: http://eprints.iisc.ac.in/id/eprint/22624

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