Dielectric relaxation in laser ablated polycrystalline ZrTiO4 thin films

Victor, P and Bhattacharyya, S and Krupanidhi, SB (2003) Dielectric relaxation in laser ablated polycrystalline ZrTiO4 thin films. In: Journal of Applied Physics, 94 (8). pp. 5135-5142.

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Abstract

Relaxation and conduction mechanisms under small ac fields of laser ablated ZrTiO4 thin films were analyzed in the light of impedance and modulus spectroscopy. The overall dielectric properties were mainly dominated by a Maxwell–Wagner type of relaxation with grains and the grain boundary two distinct parts of the circuit. Each of these parts was found to follow the universal power law of frequency dispersion. The modulus plot confirmed that the capacitive parts were relatively independent of the frequency and temperature, whereas the impedance and ac conduction studies exhibited significant temperature and frequency dependence. The conduction inside the grains was suggestive of a hopping mechanism through various defect sites whereas the interface barrier potential dictated grain boundary conduction.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright for this article belongs to American Institute of Physics (AIP).
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	03 Nov 2004
Last Modified:	19 Sep 2010 04:17
URI:	http://eprints.iisc.ac.in/id/eprint/2241

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