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Resistance Noise in Graphene Based Field Effect Devices

Pal, Atindra Nath and Ghosh, Arindam (2009) Resistance Noise in Graphene Based Field Effect Devices. In: 20th International Conference on Noise and Fluctuations, JUN 14-19, 2009, Pisa, Italy, pp. 479-482.

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Abstract

We present a low-frequency electrical noise measurement in graphene based field effect transistors. For single layer graphene (SLG), the resistance fluctuations is governed by the screening of the charge impurities by the mobile charges. However, in case of Bilayer graphene (BLG), the electrical noise is strongly connected to its band structure, and unlike single layer graphene, displays a minimum when the gap between the conduction and valence band is zero. Using double gated BLG devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to American Institute of Physics.
Keywords: bilayer graphene;conductivity noise;band gap.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 04 Jan 2010 11:47
Last Modified: 04 Jan 2010 11:47
URI: http://eprints.iisc.ac.in/id/eprint/21348

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