ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Pressure induced polymorphous crystallization in bulk Ge20Te80 glass

Parthasarathy, G and Asokan, S and Gopal, ESR (1986) Pressure induced polymorphous crystallization in bulk Ge20Te80 glass. In: Physica A: Statistical Mechanics and its Applications, 139 (1-3). pp. 266-268.

[img] PDF
physica_139-1-3_266_1986.pdf - Published Version
Restricted to Registered users only

Download (167kB) | Request a copy
Official URL: http://www.sciencedirect.com/science?_ob=ArticleUR...


The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge20Te80 is reported. The effect of annealing is also studied. The glass undergoes a polymorphous or congruent crystallization under high pressures. The high pressure phase is found to have fcc structure with Image . Under thermal treatment the glass undergoes the double stage crystallization. The sample annealed at the first crystallization temperature shows a pressure induced semiconductor-to-metal transition at 4.0 GPa pressure and the crystalline Ge20Te80 samples show the transition at 7 GPa pressure.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Division of Physical & Mathematical Sciences > Physics
Depositing User: K.S. Satyashree
Date Deposited: 29 Jan 2010 09:48
Last Modified: 12 Sep 2013 05:27
URI: http://eprints.iisc.ac.in/id/eprint/21283

Actions (login required)

View Item View Item