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A DLTS technique for surface state capture cross-section measurement of MOS diodes

Chandra, Mohan M and Kumar, Vikram (1985) A DLTS technique for surface state capture cross-section measurement of MOS diodes. In: Applications of Surface Science, 22-23 (2). pp. 1004-1010.

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Abstract

A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence σn is inferred from data analysis. Temperature dependence of σn is shown to be consistent with the observed DLTS line shapes.

Item Type: Journal Article
Additional Information: The copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Paramesha S
Date Deposited: 03 Jul 2009 10:14
Last Modified: 19 Sep 2010 05:34
URI: http://eprints.iisc.ac.in/id/eprint/20818

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