Novel ultrahigh resolution silverless photothermal imaging in obliquely deposited amorphous Se-Ge films

Harshavardhan, K. Solomon and Krishna, KN (1985) Novel ultrahigh resolution silverless photothermal imaging in obliquely deposited amorphous Se-Ge films. In: Applied Physics Letters, 47 (10). pp. 1074-1076.

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Abstract

A new photothermal imaging process which utilizes no silver has been demonstrated in obliquely deposited Se-Ge films. Band-gap irradiation of Se-Ge films has been found to give rise to phases of the type SeOx, GeO, and Se as borne by x-ray initiated Auger electron spectroscopy and x-ray photoelectron spectroscopy. Annealing of SeOx leads to the formation of SeO2. The large (several orders of magnitude) difference in vapor pressures of SeO2 and Se-Ge films results in differential evaporation of the films when annealed around 200 °C, thereby leading to imaging. Such a large contrast in evaporation rates between the exposed and unexposed regions has great potential applications in high resolution image storage and phase holography. Applied Physics Letters is copyrighted by The American Institute of Physics.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	The copyright of this article belongs to American Institute of Physics
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	13 Nov 2009 11:25
Last Modified:	19 Sep 2010 05:32
URI:	http://eprints.iisc.ac.in/id/eprint/20228

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