Bismuth-doped amorphous-germanium sulfidesemiconductors

Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Bismuth-doped amorphous-germanium sulfidesemiconductors. In: Physical Review B, 34 (12). pp. 8786-8793.

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Abstract

A study of the effect of bismuth dopant on the electronic transport properties of the amorphous semiconductors Ge20S80-xBix under high pressure (up to 140 kbar) has been carried out down to liquid-nitrogen temperature. The experiments reveal that the electronic conduction is strongly composition dependent and is thermally activated with a single activation energy at all pressures and for all compositions. A remarkable resemblance between the electronic conduction process, x-ray diffraction studies, and differential thermal analysis results is revealed. It is proposed that the n-type conduction in germanium chalcogenides doped with a large Bi concentration is due to the effect of Bi dopants on the positive correlation energy defects present in germanium chalcogenides. The impurity-induced chemical modification of the network creates a favorable environment for such an interaction.

Item Type:	Journal Article
Publication:	Physical Review B
Publisher:	American Physical Society
Additional Information:	Copyright of this article belongs to American Physical Society
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	28 May 2009 07:12
Last Modified:	19 Sep 2010 05:32
URI:	http://eprints.iisc.ac.in/id/eprint/20207

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