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Resistance Noise in Electrically Biased Bilayer Graphene

Palucha, Andrzej and Ghosh, Arindam (2009) Resistance Noise in Electrically Biased Bilayer Graphene. In: Physical Review Letter, 102 (12). pp. 126805-1.

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Official URL: http://prl.aps.org/abstract/PRL/v102/i12/e126805

Abstract

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene are strongly connected to its band structure and display a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization, and screening properties of bilayer graphene.

Item Type: Journal Article
Additional Information: Copyright of this artical belongs to American Physical Society.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Mrs Swathi
Date Deposited: 12 Jan 2010 07:45
Last Modified: 19 Sep 2010 05:30
URI: http://eprints.iisc.ac.in/id/eprint/19940

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