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Resistance Noise in Electrically Biased Bilayer Graphene

Pal, Atindra Nath and Ghosh, Arindam (2009) Resistance Noise in Electrically Biased Bilayer Graphene. In: Physical Review Letters, 102 (12). pp. 1-5.

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We demonstrate that the low-frequency resistance uctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which oers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to The American Physical Society.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 14 Dec 2009 10:00
Last Modified: 19 Sep 2010 05:30
URI: http://eprints.iisc.ac.in/id/eprint/19823

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