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Studies on $Ge/CeO{_2}$ thin film system using positron beam and Raman spectroscopy

Rao, G Venugopal and Amarendra, G and Viswanathan, B and Kanakaraju, S and Balaji, S and Mohan, S and Sood, AK (2002) Studies on $Ge/CeO{_2}$ thin film system using positron beam and Raman spectroscopy. In: Thin Solid Films, 406 (1-2). pp. 250-254.

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Positron beam and Raman spectroscopic studies are reported on a Ge/CeO2 thin film system grown on a Si substrate. The variation of the Doppler line shape S-parameter, as a function of positron beam energy, shows a pronounced maximum corresponding to the Ge-region of as-grown film, while no equivalent feature is seen in the sample annealed at 773 K. The Raman spectrum of the as-grown film exhibits a broad band, as opposed to a sharp peak observed for the annealed sample, Based on the correlated evidence from the two measurements, it is concluded that the Ge layer in the as-grown sample is amorphous, containing a large concentration of structural vacancies. Isochronal annealing measurements of the lineshape parameter in the temperature range of 300 to 773 K indicate a rather continuous transformation of amorphous Ge to the crystalline state.

Item Type: Journal Article
Publication: Thin Solid Films
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Amorphous materials;Germanium;Positron spectroscopy;Raman scattering;Defects.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 23 Nov 2009 07:39
Last Modified: 19 Sep 2010 05:02
URI: http://eprints.iisc.ac.in/id/eprint/18446

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