Influence of quantum confinement on the electronic and magnetic properties of (Ga,Mn)As diluted magnetic semiconductor

Sapra, S and Sarma, DD and Sanvito, S and Hill, NA (2002) Influence of quantum confinement on the electronic and magnetic properties of (Ga,Mn)As diluted magnetic semiconductor. In: Nano Letters, 2 (4). pp. 605-608.

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Abstract

We investigate the effect of quantum confinement on the electronic structure of diluted magnetic semiconductor Ga1-xMnxAs using a combination of tight-binding and density functional methods. We observe half metallic behavior in the clusters as well as a strong majority-spin Mn d-As p hybridization down to sizes as small as 20 Angstrom in diameter. Below this size, the doped holes are significantly self-trapped by the Mn sites, signaling both valence and electronic transitions. Our results imply that magnetically doped III-V nanoparticles will provide a medium for manipulating the electronic structure of dilute magnetic semiconductors while conserving the magnetic properties and even enhancing them in certain size regimes.

Item Type:	Journal Article
Publication:	Nano Letters
Publisher:	American Chemical Society
Additional Information:	Copyright of this article belongs to American Chemical Society.
Keywords:	Injection;Clusters.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	21 Aug 2009 11:28
Last Modified:	19 Sep 2010 05:01
URI:	http://eprints.iisc.ac.in/id/eprint/18393

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