Shape deterioration of mesa structures in post-CMOS anisotropic etching of silicon microsensors: an experimental study

Takao, Hidekuni and Yong, Chuck-Chen and Rajanna, K and Ishida, Makoto (2000) Shape deterioration of mesa structures in post-CMOS anisotropic etching of silicon microsensors: an experimental study. In: Sensors and Actuators A- Physical, 86 (1-2). pp. 115-121.

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Abstract

In the present study, the shape deterioration problem encountered in post-CMOS silicon anisotropic etching using Plasma Enhanced CVD (PECVD) silicon nitride masking layer has been investigated. Large shape deterioration was observed at every convex corner of silicon mesa structures formed with some kinds of PECVD-SiN masking layer. The cause of the problem has been clarified through experiments. The fragile property of the masking material was an important factor on the resulting shape deterioration problem. It was found from the experimental results that compressive intrinsic stress or strong adhesion of masking material is necessary to obtain a desirable shape of mesa structures. In addition to PECVD-SiN masking layer, sputtered SiO2 layer was also evaluated for its suitability as masking layer in post-CMOS micromachining. It has been found that sputtered SiO2 masking layer performs well for post-CMOS anisotropic etching of silicon mesastructures/microsensors.

Item Type:	Journal Article
Publication:	Sensors and Actuators A- Physical
Publisher:	Elsevier Sceince
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	Post-CMOS micromachining;Anisotropic etching;Masking material;Intrinsic stress
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	13 Nov 2009 06:26
Last Modified:	19 Sep 2010 05:00
URI:	http://eprints.iisc.ac.in/id/eprint/18206

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