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Pulsed excimer laser ablated copper indium diselenide thin films

Victor, P and Nagaraju, J and Krupanidhi, SB (2000) Pulsed excimer laser ablated copper indium diselenide thin films. In: Solid State Communication, 116 (12). pp. 649-653.

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{CuInSe_2} thin films of thickness in the range of 0.45-1.8 mum were deposited on glass, Pt coated Si and Mo substrates by pulsed laser ablation at 150 degreesC. Rapid thermal annealing (RTA) at a high heating rate was employed and its effect on crystallinity of the films was investigated. X-ray diffraction patterns of the RTA films, exhibited a highly preferred orientation along the (112) plane establishing the chalcopyrite structure. The composition of the as-grown and RTA films maintained the required stoichiometry ratios uniformly over a reasonable area. The EDAX composition analysis revealed that the films annealed at 500 degreesC for {20_s} were slightly indium I ich, which consequently led the films to exhibit an n-type conductivity. However, RTA processing of the as-grown films at a higher temperature under controlled soaking time transformed the films to exhibit a p-type conductivity.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Laser ablation; Thin films; Rapid thermal annealing
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Arun
Date Deposited: 04 Nov 2009 11:03
Last Modified: 19 Sep 2010 05:00
URI: http://eprints.iisc.ac.in/id/eprint/18107

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