The photoionisation energy of the thermally induced $E_v$ +0.42 eV level in p-silicon

Indusekhar, H and Kumar, Vikram (1985) The photoionisation energy of the thermally induced $E_v$ +0.42 eV level in p-silicon. In: Journal of Physics C: Solid State Physics, 18 (26). pp. 5095-5098.

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Abstract

The photoionisation energies of thermally induced levels (H1 and H2) in a quenched n + p silicon diode are measured by the DLOS technique. The photoionisation cross sections are well described by the Lucovsky model. The measured photoionisation energies ($E_v$ +0.42 eV and $E_v$ +0.52 eV) confirm the thermal activation energy determined by the DLTS method.

Item Type:	Journal Article
Publication:	Journal of Physics C: Solid State Physics
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Physics
Date Deposited:	09 Jul 2008
Last Modified:	19 Sep 2010 04:47
URI:	http://eprints.iisc.ac.in/id/eprint/14861

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