Interference enhanced Raman spectroscopy of ultra thin crystalline Ge films

Kanakaraju, S and Sood, AK and Mohan, S (1998) Interference enhanced Raman spectroscopy of ultra thin crystalline Ge films. In: Current Science, 74 (4). pp. 322-327.

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Abstract

We report Raman study of ultra thin Ge films using interference enhanced Raman scattering which uses a trilayer structure of Al, CeO2 and crystalline Ge films. The use of CeO2 allows the growth of crystalline Ge films at relatively low substrate temperatures (300 degrees C). With a decrease of Ge film thickness, the Raman line exhibits an increased red shift of the peak position and line broadening. The latter can be quantitatively explained on the basis of phonon confinement in the growth direction. Raman spectra of the 2 nm and 4 nm thick Ge films show shoulder at similar to 280 $cm^{-1}$ which could be attributed to surface phonons. The changes in the Raman shift as a function of thickness showed that the films were compressively strained up to a thickness of similar to -7 nm beyond which the strain is released.

Item Type:	Journal Article
Publication:	Current Science
Publisher:	Indian Academy of Sciences
Additional Information:	Copyright for this article belongs to Indian Academy of Sciences.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics
Date Deposited:	08 Feb 2005
Last Modified:	19 Sep 2010 04:15
URI:	http://eprints.iisc.ac.in/id/eprint/1478

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