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Critical-current variation with Pr content in {Y_{1-x}Pr_xBa_2Cu_3O_7} epitaxial films

Hegde, MS and Thomas, Boben and Vasanthacharya, NY and Bhat, SV and Srinivasu, VV and Kumar, N (1993) Critical-current variation with Pr content in {Y_{1-x}Pr_xBa_2Cu_3O_7} epitaxial films. In: Physical Review B: Condensed Matter and Materials Physics, 48 (9). pp. 6465-6459.

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c-axis-oriented epitaxial {Y_{1-x}Pr_xBa_2Cu_3O_7} (x = 0, 0.05, 0.1, 0.2, 0.3, and 0.35) thin films have been grown with the pulsed-laser-deposition method. Superconducting transition temperatures of the films are within \pm 2 K of the corresponding polycrystalline bulk samples. The critical current density {J_c} of Pr-doped films for x = 0.1–0.3 is about two orders of magnitude lower than of the pure 1:2:3 films. This exponential fall in {J_c} with doping (x) can be understood semiquantitatively in terms of depairing due to a random-impurity (Pr-ion) potential causing localized suppression of the superconducting order parameter around the impurity to about the in-plane coherence length.

Item Type: Journal Article
Publication: Physical Review B: Condensed Matter and Materials Physics
Publisher: The American Physical Society
Additional Information: Copyright for this article belongs to the American Physical Society.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 04 Jul 2008
Last Modified: 19 Sep 2010 04:46
URI: http://eprints.iisc.ac.in/id/eprint/14579

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