Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide

Mendez, B and Dutta, PS and Piqueras, J and Dieguez, E (1995) Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide. In: Applied Physics Letters, 67 (18). pp. 2648-2650.

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Abstract

The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence ~CL! technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers prepared from as-grown single crystals. Postgrowth annealing in vacuum, gallium, and antimony atmospheres has been performed to obtain more accurate information about the defect structure in this material. In general, on annealing, homogeneous distribution of impurities is observed throughout the wafers. CL spectra show that a luminescence band ~centered at 756 meV! is enhanced by annealing in a gallium atmosphere, suggesting that Ga atoms play an important role in the formation of this acceptor center. The 756 meV peak has been attributed to a transition from conduction band to an acceptor center comprised of $Ga_{Sb}$ or a related complex. Interestingly, localized crystallization at the subgrain boundaries seems to occur by annealing in Ga atmosphere

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	The copyright belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	30 Jun 2008
Last Modified:	19 Sep 2010 04:46
URI:	http://eprints.iisc.ac.in/id/eprint/14434

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