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Investigations on zinc oxide thin films grown on Si (100) by thermal oxidation

Dhananjay, * and Nagaraju, J and Krupanidhi, SB (2007) Investigations on zinc oxide thin films grown on Si (100) by thermal oxidation. In: Materials Science and Engineering: B, 137 (1-3). pp. 126-130.

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Thin films of ZnO were grown on p-type Si (100) substrates by thermal oxidation. The in situ growth of the metallic Zn films were thermally oxidized at different temperatures ranging from $300 to 500 ^0 C$ to yield ZnO thin films. The structural characterization of the thin films was carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The X-ray diffraction measurements show that the films deposited at $500 ^0 C$ had better crystalline quality than the rest. The electrical transport properties of the ZnO/Si heterojunction were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The heterojunction exhibited a barrier height, which is consistent with the energy difference between the work functions of Si and ZnO. Complex impedance spectroscopy measurements at temperatures ranging from $50 to 125 ^0 C$ were performed on these heterojunctions.

Item Type: Journal Article
Publication: Materials Science and Engineering: B
Publisher: Elsevier
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Thermal oxidation;Heterojunction;Complex impedance spectroscopy
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Division of Chemical Sciences > Materials Research Centre
Date Deposited: 02 Jun 2008
Last Modified: 19 Sep 2010 04:45
URI: http://eprints.iisc.ac.in/id/eprint/14106

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