The effect of substrate surface on the physical properties of SnS films

Devika, M and Reddy, Koteeswara N and Ramesh, K and Sumana, HR and Gunasekhar, KR and Gopal, ESR and Reddy, Ramakrishna KT (2006) The effect of substrate surface on the physical properties of SnS films. In: Semiconductor Science and Technology, 21 . pp. 1495-1501.

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Abstract

The effect of substrates on the physical properties of tin mono-sulphide (SnS) films has been studied. The SnS films were deposited using the resistive thermal evaporation method on CORNING 7059 glass, ITO-coated glass, Si wafer and Ag-coated glass substrates. The as-deposited films exhibited nearly stoichiometry between Sn and S elements with a Sn/S at.\% ratio of ~1.05. Structural analysis of these films indicated that the films are crystallized in the form of an orthorhombic crystalline structure and showed (1 1 1) as a dominant peak, except for the films grown on Si substrates. Si/SnS films exhibited (0 4 0) as a dominant peak. The ITO/SnS films showed high values of rms roughness (~14.9 nm) and average grain size (~225 nm), along with a low electrical resistivity of $8.9 x 10^{-3} \omega cm$ as compared to SnS films grown on glass, Si and Ag substrates. The ITO/SnS films exhibit low resistivity, probably due to the large size of grains, and could be suitable for optoelectronic device applications.

Item Type:	Journal Article
Publication:	Semiconductor Science and Technology
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics
Date Deposited:	21 May 2008
Last Modified:	19 Sep 2010 04:45
URI:	http://eprints.iisc.ac.in/id/eprint/14022

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