On the Quenched-In Defects in n-Type Silicon

Balasubramanyam, N and Kumar, V (1987) On the Quenched-In Defects in n-Type Silicon. In: Physica Status Solidi A: Applied Research, 100 (1). pp. 239-244.

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Abstract

Electrical properties of deep levels introduced during quenching from high temperatures in VPE layers of n-type silicon are investigated. Two levels at 0.51 and 0.32 eV below the conduction band are found. The capture cross section of the deeper level is large (> 1.0 × {10^{-15}} {cm^2}). The capture cross section of the shallower level is of the order of {10^{-16}} {cm^2} and has a ${T^2}$ dependence. It is suggested that the deeper level is due to the positively charged state and the shallower level to the neutral charge state of the same defect. The probable origin of the defect is the contamination by iron during wafer processing. The pressure coefficients of the energy levels and the electron capture cross sections are determined.

Item Type:	Journal Article
Publication:	Physica Status Solidi A: Applied Research
Publisher:	John Wiley & Sons, Inc.
Additional Information:	Copyright for this article belongs to John Wiley & Sons, Inc.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	13 May 2008
Last Modified:	19 Sep 2010 04:44
URI:	http://eprints.iisc.ac.in/id/eprint/13942

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