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Minority Carrier Lifetime in Polycrystalline Semiconductors

Kumar, Ram K and Satyam, M (1983) Minority Carrier Lifetime in Polycrystalline Semiconductors. In: Physica Status Solidi A: Applied Research, 77 (2). pp. 467-470.

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A model is described for grain boundary recombination in polycrystalline semiconductors. This model enables the evaluation of minority carrier lifetime in these materials.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Wiley InterScience
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering > Electrical Communication Engineering - Technical Reports
Depositing User: Mr. Ramesh Chander
Date Deposited: 10 Apr 2008
Last Modified: 19 Sep 2010 04:44
URI: http://eprints.iisc.ac.in/id/eprint/13656

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