Anbarasu, M and Asokan, S
(2007)
*The influence of network rigidity on the electrical switching behaviour of Ge–Te–Si glasses suitable for phase change memory applications.*
In: Journal of Physics D: Applied Physics, 40
(23).
pp. 7515-7518.

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## Abstract

$Ge_{15}Te_{85-x}Si_x (2 \leq x \leq 12)$ glasses of a wide range of compositions have been found to exhibit electrical switching at threshold voltages in the range 100–600V, for a sample thickness of 0.3 mm. The samples become latched to the ON state (memory behaviour) at higher ON state currents (>1 mA).However, the switching is found to be reversible (threshold behaviour) if the ON state current is limited to lower values ( \leq 0.7 mA). While $Ge_{15}Te_{85-x}Si_x$ glasses with x \leq 5 exhibit a normal electrical switching, an unstable behaviour is seen in the I–V characteristics of $Ge_{15}Te_{85-x}Si_x$ glasses with x > 5 during the transition to the ON state. Further, a sparking in the electrode region and the splashing of the active material is observed in $Ge_{15}Te_{85-x}Si_x$ glasses with x > 5. It is also interesting to note that the switching voltage $(V_T)$ and initial resistance (R) of $Ge_{15}Te_{85-x}Si_x$ glasses increase with addition of Si, exhibiting a change in slope at a composition x = 5 ( \langle r \rangle = 2.4). The observed electrical switching behaviour of $Ge_{15}Te_{85-x}Si_x$ glasses has been understood on the basis that the composition x = 5 is the rigidity percolation threshold of the $Ge_{15}Te_{85-x}Si_x$ system. It is also proposed that the $Ge_{15}Te_{85-x}Si_x$ glasses with x < 5 are likely to be more suitable for phase change memory applications.

Item Type: | Journal Article |
---|---|

Publication: | Journal of Physics D: Applied Physics |

Publisher: | Institute of Physics |

Additional Information: | Copyright of this article belongs to Institute of Physics and IOP. |

Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |

Date Deposited: | 13 Feb 2008 |

Last Modified: | 19 Sep 2010 04:42 |

URI: | http://eprints.iisc.ac.in/id/eprint/13015 |

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