Iyer, Suman B and Kumar, Vikram and Harshavardhan, KS (1989) Interface State Density Distribution in Amorphous/Crystalline Silicon Heterostructures. In: Japanese Journal of Applied Physics, 28, Part-2 (5). L744-L746.
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We present the first report of the interface state density distribution in undoped hydrogenated amorphous silicon/crystalline silicon heterostructures. The observed MIS (metal-insulator-semiconductor) like high frequency C(V) variation in this structure is used to obtain interface state density distribution in heterostructures with a-Si:H layer prepared either by reactive sputtering or glow discharge technique
| Item Type: | Journal Article |
|---|---|
| Publication: | Japanese Journal of Applied Physics |
| Publisher: | Institute of Pure and Applied Physics |
| Additional Information: | Copyright of this article belongs to Institute of Pure and Applied Physics |
| Keywords: | hydrogenated amorphous silicon; amorphous/crystalline heterojunction; interface states; high frequency capacitance; reactive sputtering; glow discharge technique |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 23 Feb 2008 |
| Last Modified: | 27 Aug 2008 13:09 |
| URI: | http://eprints.iisc.ac.in/id/eprint/12881 |
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