Temperature Dependence of Photocurrent in Undoped Semi-insulating Gallium Arsenide

Mohapatra, YN and Kumar, V (1989) Temperature Dependence of Photocurrent in Undoped Semi-insulating Gallium Arsenide. In: Physica Status Solidi A: Applied Research, 114 (2). pp. 659-663.

PDF sdarticle.pdf1114.pdf Restricted to Registered users only Download (359kB) | Request a copy

Abstract

The temperature dependence of extrinsic and intrinsic photocurrent, in undoped semi-insulating GaAs containing EL2, in the range 20 K to 200 K is studied. The photocurrent increases ecponentially as the temperature is decreased down to 50 K and then decreases slightly for lower temperatures. It is argued that the exponential increase in photocurrent is due to the thermal activation energy of hole capture cross-section of the lifetime controlling centre

Item Type:	Journal Article
Publication:	Physica Status Solidi A: Applied Research
Additional Information:	Copyright of this article belongs to John Wiley and Sons
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Feb 2008
Last Modified:	19 Sep 2010 04:42
URI:	http://eprints.iisc.ac.in/id/eprint/12794

Actions (login required)

View Item