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Trapping kinetics and metastability of the DX center in AlGaAs

Mohapatra, YN and Kumar, V (1990) Trapping kinetics and metastability of the DX center in AlGaAs. In: Journal of Applied Physics, 68 (7). pp. 3431-3434.

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Abstract

Trapping characteristics of two peaks, named A and B, associated with the well-known DX center in molecular-beam epitaxial grown, silicon-doped $Al_xGa_{1-x}As$ (x=0.36) are studied by deep-level transient spectroscopy as function of filling pulse width. With increase in filling pulse duration, several interesting features are noted including interdependence of the two peaks apparently logarithmic increase in height, shift in the peak temperature of the low-temperature peak B, and sharp reduction in its width. These unusual features provide clues to the dynamics of carrier capture and emission at the defect. We propose a model to qualitatively explain these features.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Ramya Krishna
Date Deposited: 04 Jul 2007
Last Modified: 20 Jan 2012 06:37
URI: http://eprints.iisc.ac.in/id/eprint/11388

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