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dc leakage behavior in vanadium-doped bismuth titanate thin films

Chaudhuri, Aryan Roy and Krupanidhi, SB (2005) dc leakage behavior in vanadium-doped bismuth titanate thin films. In: Journal of Applied Physics, 98 (9). 094112-1-094112-6.

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The dc leakage current behavior and its thickness dependence in vanadium-doped bismuth titanate thin films have been investigated over a wide range of temperatures. The leakage current behavior was explained on the basis of space-charge-limited conduction theory. The current density, calculated from the I-V characteristics, was found to be $2.01X10^{-9} A/cm^2$ at an applied field of 2.9 KV/cm at room temperature. Three distinct regions were observed in the I-V plot which were attributed to the Ohmic region, trap-filled limit, and Child’s law. The influence of the film thickness on the dc leakage current conduction was found to be matching with that predicted by Lampert’s theory.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: PradeepKumar UM
Date Deposited: 29 Jun 2007
Last Modified: 18 Jan 2012 05:28
URI: http://eprints.iisc.ac.in/id/eprint/11325

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