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Oriented growth of thin films of samarium oxide by MOCVD

Shalini, K and Shivashankar, SA (2005) Oriented growth of thin films of samarium oxide by MOCVD. In: Bulletin of Materials Science, 28 (1). pp. 49-54.

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Thin films of $Sm_2O_3$ have been grown on $Si(100)$ and fused quartz by low-pressure chemical vapour deposition using an adducted $\beta$-diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures $(\sim 550^0C)$, while they grow with a strong (111) orientation as the temperature is raised (to $625^0C$). On $Si(100)$, highly oriented films of cubic $Sm_2O_3$ at $625^0C$, and a mixture of monoclinic and cubic polymorphs of $Sm_2O_3$ at higher temperatures, are formed. Films grown on either substrate are very smooth and fine-grained. Infrared spectroscopic study reveals that films grown above $600^0C$ are free of carbon.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Indian Academy of Sciences.
Keywords: MOCVD;thin films;b-diketonate;samarium oxide;gate dielectric.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Ramya Krishna
Date Deposited: 22 Jun 2007
Last Modified: 16 Jan 2012 04:43
URI: http://eprints.iisc.ac.in/id/eprint/11220

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