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Dielectric and domain structural properties of $Bi_2Ge_xV_{1-x}O_{5.5-x/2}$ single crystals

Prasad, KVR and Varma, KBR (1994) Dielectric and domain structural properties of $Bi_2Ge_xV_{1-x}O_{5.5-x/2}$ single crystals. In: 8th IUPAP International Meeting on Ferroelectricity: IMF-8, 8-13 Aug. 1993, Gaithersburg, MD, USA, pp. 205-210.

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Single crystals of $Bi_2Ge_xV_{1-x}O_{5.5-x/2}$, with various concentrations of x, have been grown by slowly cooling the melts of $Bi_2O_3, V_2O_5$ and $GeO_2$ in appropriate ratios. Single crystal X-ray diffraction studies confirm their single crystallinity. X-ray powder diffraction studies carried out on crushed single crystals indicate that the compositions corresponding x=0.3 to 0.5 belong to the tetragonal system, while the remaining concentrations of x (0&les;x<0.3 and 1&ges;x>0.5) belong to the orthorhombic system. The polarising microscopic investigations revealed the existence of interesting ferroelectric domain patterns. The dielectric and ferroelectric studies have been done along the c axis of these crystals

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Taylor and Francis Group.
Keywords: bismuth compounds;dielectric hysteresis;electric domains; ferroelectric materials;germanium compounds;lattice constants;permittivity;X-ray diffraction
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Srinivas B
Date Deposited: 07 Nov 2007
Last Modified: 11 Jan 2012 10:13
URI: http://eprints.iisc.ac.in/id/eprint/11059

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