Balasubramanian, S and Kumar, Vikram (1995) Hydrogen passivation of shallow dopants in InP studied by photoluminescence spectroscopy. In: Symposium Defect and Impurity Engineered Semiconductors and Devices, 17-21 April 1995, San Francisco, CA, USA, pp. 453-457.
Full text not available from this repository. (Request a copy)Abstract
The effect of hydrogenation on the photoluminescence (PL) of InP:Mg, InP:Zn and undoped n-InP is presented. An increase in the near band edge PL intensity due to passivation of non-radiative centers was observed in all the samples. A donor-acceptor pair transition was observed before hydrogenation in the InP:Mg sample and after hydrogenation in the InP:Zn sample due to the acceptor deactivation. In n-InP the enhancement of donor bound exciton after hydrogenation points to the absence of donor passivation
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Materials Research Society |
| Additional Information: | Copyright of this article belongs to Materials Research Society. |
| Keywords: | excitons;hydrogen;III-V semiconductors;impurity states;indium compounds;magnesium;passivation;photoluminescence;zinc |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 17 Sep 2007 |
| Last Modified: | 11 Jan 2012 05:07 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10885 |
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