Chakraborty, Arpan and Mane, Anil U and Shivashankar, SA and Venkataraman, V (2003) Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition. In: Novel Materials and Processes for Advanced CMOS. Symposium, 2-4 Dec. 2002, Boston, MA, USA, pp. 143-7.
Full text not available from this repository. (Request a copy)Abstract
Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage ($V_F_B$) and charge trapping and detrapping causes hysterectic changes on voltage cycling. Both phenomena affect stable and reliable transistor operation. In this paper we have studied for the first time the effect of post-metallization hydrogen annealing on the C-V curve of MOS capacitors employing zirconia, one of the most promising gate dielectric. Samples were annealed in hydrogen ambient for up to 30 minutes at different temperatures ranging from room temperature to 400°C. C-V measurements were done after annealing at each temperature and the hysteresis width was calculated from the C-V curves. A minimum hysteresis width of ~35 mV was observed on annealing the sample at 200°C confirming the excellent suitability of this dielectric
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Mater. Res. Soc |
| Additional Information: | Copyright of this article belongs to Material Research Society. |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 21 Aug 2007 |
| Last Modified: | 09 Jan 2012 06:39 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10636 |
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