Singh, MP and Mukhopadhayay, S and Devi, A and Shivashankar, SA (2001) A study of nucleation and growth in MOCVD: The growth of thin films of alumina. In: Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Strutures, Nov 27-Dec 1 2000, Boston, MA, P6471-P6476.
Full text not available from this repository. (Request a copy)Abstract
We have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate ${Al(acac)_3}$ as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Materials Research Society |
| Additional Information: | Copyright of this article belongs to Materials Research Society |
| Keywords: | Alumina;Film growth;Nucleation;Metallorganic chemical vapor deposition;Semiconducting silicon;Chemical reactors;Optical microscopy;Scanning electron microscopy;Secondary ion mass spectrometry;X ray diffraction analysis |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 16 Aug 2007 |
| Last Modified: | 27 Aug 2008 12:45 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10505 |
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