Vargheese, Deenamma K and Rao, Mohan G (2001) Studies on titanium nitride coatings-effect of ion bombardment. In: Ion Beam Synthesis and Processing of Advanced Materials. Symposium, 27-29 Nov. 2000, Boston, MA, USA, O11.9.1-O11.9.6.
Full text not available from this repository. (Request a copy)Abstract
Ion bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. electron cyclotron resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma $(10^{11} cm^{-3})$, whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low $(10^9 cm^{-3})$. The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity
| Item Type: | Conference Paper |
|---|---|
| Publisher: | Materials Research Society |
| Additional Information: | Copyright of this article belongs to Materials Research Society |
| Keywords: | crystal structure;electrical resistivity;grain size;insulating thin films;ion beam assisted deposition;ion beam effects;plasma deposited coatings;plasma deposition;rough surfaces;semiconductor growth;sputter deposition;sputtered coatings;surface topography;titanium compounds |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
| Date Deposited: | 13 Aug 2007 |
| Last Modified: | 12 Jan 2011 10:22 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10476 |
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