Krupanidhi, SB and Saha,, S and Bhattacharyya, S and Bharadwaja, SSN (2000) Excimer laser ablation processed ferroelectric and antiferroelectric thin films. In: Twelfth International Symposium on Integrated Ferroelectrics, 12-15 March 2000, Aachen, Germany, pp. 1-12.
Full text not available from this repository. (Request a copy)Abstract
The dielectric and electrical properties of excimer laser ablated processed paraelectric $(Ba_{0.5},Sr_{0.5})TiO_3$ ferroelectric Bi-layered $SrBi_2(Ta_{0.5}Nb_{0.5})_2O_9$ and antiferroelectric $(PbZrO_3)$ thin films have been investigated. The effect of processing parameters on the microstructure of the films and the functional properties has been presented in detail. Some of the recent studies of stress induced effects, dielectric, hysteresis and ac and dc electrical properties have been highlighted in conjunction with microstructures of the films
| Item Type: | Conference Paper |
|---|---|
| Publication: | Integrated Ferroelectrics |
| Publisher: | Gordon & Breach |
| Additional Information: | Copyright of this article belongs to Gordon & Breach |
| Keywords: | antiferroelectric materials;barium compounds;bismuth compounds;crystal microstructure;ferroelectric materials;ferroelectric thin films;laser ablation;lead compounds;strontium compounds |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
| Date Deposited: | 07 Aug 2007 |
| Last Modified: | 27 Aug 2008 12:44 |
| URI: | http://eprints.iisc.ac.in/id/eprint/10401 |
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