Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers

Hudait, Mantu Kumar and Modak, Prasanta and Hardikar, Shyam and Krupanidhi, SB (1997) Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers. In: Solid State Communications, 103 (7). pp. 411-416.

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Abstract

A detailed analysis of low temperature photoluminescence (PL) spectro- scopy on undoped high quality GaAs is presented. For undoped GaAs epitaxial layers grown by low pressure metal organic chemical vapor deposition under different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. The V/III ratio has strong effect on the optical properties of undoped GaAs epitaxial layers, When the V/III ratio was varied from 45 to 87, the electron concentration, n, of undoped GaAs increased with increasing V/III ratio. Below the V/III ratio of 45 in our case, the sample exhibited a p-type behavior, which has been identified by photoluminescence as well as depth profiling by Electra-chemical Capacitance Voltage (ECV) profiler.

Item Type:	Journal Article
Publication:	Solid State Communications
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier.
Keywords:	A.semiconductors
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	23 Jun 2007
Last Modified:	19 Sep 2010 04:36
URI:	http://eprints.iisc.ac.in/id/eprint/10175

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